Brief: Discover the HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace, designed for high-performance semiconductor epi growth. Featuring multiple temperature control zones, this furnace ensures uniform coating and rapid deposition rates up to 50 microns per hour. Ideal for carbon-based and ceramic-based materials, it’s engineered for efficiency and precision in semiconductor manufacturing.
Related Product Features:
Multiple temperature control zones ensure great temperature uniformity for consistent results.
Special deposition chamber design offers excellent sealing and anti-contamination performance.
Multiple deposition channels provide uniform gas flow, eliminating dead corners for perfect deposition surfaces.
Integrated treatment for tar, solid dust, and organic gases during the deposition process enhances cleanliness.
Designed to meet pressure vessel standards, ensuring safety and compliance with technical requirements.
Pre-tested and pre-accepted in the factory, including all pipelines and electrical connections for reliability.
Rapid cooling option available to significantly reduce production time and increase efficiency.
Comprehensive on-site training provided, covering operation, maintenance, and troubleshooting.
Pertanyaan Umum:
Are you a factory or trading company?
We are a leading high-temperature vacuum furnace manufacturer in China with over 10 years of experience.
Do you offer customization or OEM services?
Yes, our powerful R&D team and advanced equipment allow us to provide both standard and customizable furnace solutions tailored to client requirements.
What are your competitive advantages?
Our advantages include quick response times, high-quality control, a stable supply chain, timely delivery, and excellent after-sales service.