Name: Tungku lapisan CVD karbida silikon untuk pertumbuhan epi semikonduktor
Uploaded: 2026-02-11CST00:06:47-06:00
Duration: 33 s
Description: Discover the HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace, designed for high-performance semiconductor epi growth. Featuring multiple temperature control zones, this furnace ensures uniform coating and rapid deposition rates up to 50 microns per hour. Ideal for carbon-based and ceramic-based materials, it’s engineered for efficiency and precision in semiconductor manufacturing.

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Tungku lapisan CVD karbida silikon untuk pertumbuhan epi semikonduktor

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November 05, 2024

Keyword: Mesin Pelapis CVD

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#Mesin Pelapis CVD Terpadu #Mesin Pelapis CVD Tahan Aus #Alat Pelapis CVD Alat Karbida CNC

Video Description:

Discover the HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace, designed for high-performance semiconductor epi growth. Featuring multiple temperature control zones, this furnace ensures uniform coating and rapid deposition rates up to 50 microns per hour. Ideal for carbon-based and ceramic-based materials, it’s engineered for efficiency and precision in semiconductor manufacturing.

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